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DG411/412/413
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
FEATURES
D D D D D D D 44-V Supply Max Rating "15-V Analog Signal Range On-Resistance--rDS(on): 25 W Fast Switching--tON: 110 ns Ultra Low Power--PD: 0.35 mW TTL, CMOS Compatible Single Supply Capability
BENEFITS
D D D D Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing
APPLICATIONS
D D D D D Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals
DESCRIPTION
The DG411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 mW) with high speed (tON: 110 ns), the DG411 family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG411 series was built on Vishay Siliconix's high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411 and DG412 respond to opposite control logic as shown in the Truth Table. The DG413 has two normally open and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3 S1 V- NC GND S4 4 5 6 7 8 9 10
DG411
LCC D1 IN1 NC IN2 D2 Key 3 2 1 20 19 18 17 16 15 14 11 12 13 S2 V+ NC VL S3
TRUTH TABLE
Logic
0 1
DG411
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V 24
DG412
OFF ON
D4 IN4 NC IN3 D3 Top View
Document Number: 70050 S-52433--Rev. D, 06-Sep-99
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4-1
DG411/412/413
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413
Dual-In-Line and SOIC Key 4 5 6 7 8 D1 3 S1 V- NC GND S4 D4 IN4 5 6 7 8 Top View 12 11 10 9 VL S3 D3 IN3 GND S4
DG413
LCC IN1 NC IN2 2 1 20 D2 19 18 17 16 15 14 S2 V+ NC VL S3 IN2 D2 S2 V+
IN1 D1 S1 V-
1 2 3 4
16 15 14 13
TRUTH TABLE
Logic
0 1
SW1, SW4
OFF ON
SW2, SW3
ON OFF
Logic "0" v 0.8 V Logic "1" w 2.4 V 24
9 D4
10
11
12
13 D3
IN4 NC IN3 Top View
ORDERING INFORMATION
Temp Range Package Part Number
DG411/412
-40 to 85_C 16-Pin Plastic DIP DG411DJ DG412DJ DG411DY DG412DY DG411AK, DG411AK/883, 5962-9073101MEA DG412AK, DG412AK/883, 5962-9073102MEA DG411AZ/883, 5962-9073101M2A 5962-9073102M2A
-40 to 85 C 40 85_C
16-Pin Narrow SOIC
16-Pin CerDIP -55 to 125 C 55 125_C LCC-20
DG413
-40 to 85_C 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin CerDIP LCC-20 DG413DJ DG413DY DG413AK, DG413AK/883, 5962-9073103MEA 5962-9073103M2A
-55 to 125_C
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature (AK, AZ Suffix) . . . . . . . . . . . . . . -65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LCC-20e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
470 mW 600 mW 900 mW 900 mW
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C Document Number: 70050 S-52433--Rev. D, 06-Sep-99
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DG411/412/413
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current Lk C t Channel On Leakage Current VANALOG rDS(on) IS(off) ID(off) ID(on) V+ = 13.5 V, V- = -13.5 V IS = -10 mA, VD = "8.5 V , V+ = 16.5, V- = -16.5 V VD = "15.5 V VS = #15.5 V 15 5 V, 15 5 V+ = 16.5 V, V- = -16.5 V VS = VD = "15.5 V Full Room Full Room Full Room Full Room Full 25 "0.1 "0.1 "0.1 -0.25 -20 -0.25 -20 -0.4 -40 -15 15 35 45 0.25 20 0.25 20 0.4 40 -0.25 -5 -0.25 -5 -0.4 -10 -15 15 35 45 0.25 5 0.25 5 0.4 10 nA A V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Digital Control
Input Current, VIN Low Input Current, VIN High IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full 0.005 0.005 -0.5 -0.5 0.5 0.5 -0.5 -0.5 0.5 0.5 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz MH , RL = 300 W, CL = 35 p pF VS = "10 V See Figure 2 10 S Fi DG413 Only, VS = 10 V RL = 300 W, CL = 35 pF Vg = 0 V, Rg = 0 W, CL = 10 nF RL = 50 W, CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 110 100 175 240 145 160 175 220 145 160 ns
25 5 68 dB 85 9 9 35 pF F pC
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND V = 16.5, V = -16.5 V 16 5 V+ 16 5, V- VIN = 0 or 5 V Room Full Room Full Room Full Room Full 0.0001 -0.0001 0.0001 -0.0001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5
A mA
Document Number: 70050 S-52433--Rev. D, 06-Sep-99
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4-3
DG411/412/413
Vishay Siliconix
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) V+ = 10.8 V, IS = -10 mA VD = 3 V, 8 V Full Room Full 40 12 80 100 12 80 100 V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection tON tOFF tD Q RL = 300 W, CL = 35 p , pF VS = 8 V, See Figure 2 V S Fi DG413 Only, VS = 8 V, RL = 300 W, CL = 35 pF Vg = 6 V, Rg = 0 W, CL = 10 nF Room Hot Room Hot Room Room 175 95 250 400 125 140 250 315 125 140 ns
25 25 pC
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- V+ 13 5 V = 13.5, VIN = 0 or 5 V IL IGND Room Hot Room Hot Room Hot Room Hot 0.0001 -0.0001 0.0001 -0.0001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5
mA A
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. VD and Power Supply Voltage
50 r DS(on) Drain-Source On-Resistance ( W ) - 45 40 35 30 25 20 15 10 5 0 -20 -15 -10 -5 0 5 10 15 20 VD - Drain Voltage (V) 0 0 2 4 6 8 10 12 14 16 18 20 "20 V 50 "15 V "8 V "10 V "12 V V DS(on) ( W ) TA = 25_C "5 V 250 V+ = 3 V VL = 3 V
On-Resistance vs. VD and Unipolar Supply Voltage
300 VL = 5 V
200
150 V+ = 5 V 100 8V 12 V 15 V 20 V
VD - Drain Voltage (V)
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Document Number: 70050 S-52433--Rev. D, 06-Sep-99
DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Analog Voltage
40 V+ = 15 V V- = -15 V VL = 5 V TA = 25_C r DS(on) Drain-Source On-Resistance ( W ) - 30 20 10 I S, I D (pA) 0 -10 -20 -30 -40 -50 -60 -15 -10 -5 0 5 10 15 VD or VS -- Drain or Source Voltage (V) IS(off) ID(on) 35 V+ = 15 V V- = -15 V VL = 5 V 125_C 25 85_C 20 25_C 15 -55_C 10
ID, IS Leakages vs. Temperature
30
ID(off)
5 -15 -10 -5 0 5 10 15
VD - Drain Voltage (V)
Charge Injection vs. Analog Voltage
100 80 60 80 40 Q (pC) Q (pC) CL = 10 nF 20 0 CL = 1 nF -20 -20 -40 -60 -15 -10 -5 0 5 10 15 VS - Source Voltage (V) -40 -60 -15 60 V+ = 15 V V- = -15 V VL = 5 V 140 120 100
Charge Injection vs. Analog Voltage
V+ = 15 V V- = -15 V VL = 5 V
CL = 10 nF
CL = 1 nF 40 20 0
-10
-5
0
5
10
15
VD - Drain Voltage (V)
Input Switching Threshold vs. Supply Voltage
3.5 3.0 2.5 V TH (V) 2.0 6.5 V 1.5 1.0 0.5 0 (V+) 5 10 15 20 25 30 35 40 4.5 V 5.5 V 240 210 180 t ON t OFF (ns) , VL = 7.5 V 150
Switching Time vs. Temperature
V+ = 15 V V- = -15 V VL = 5 V VS = 10 V
tON 120 tOFF 90 60 30 0 -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C)
Document Number: 70050 S-52433--Rev. D, 06-Sep-99
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DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Input Switching Frequency
100 mA 10 mA 1 mA I SUPPLY 100 mA 10 mA IL 1 mA 100 nA 10 nA 10 100 1k 10 k 100 k 1M 10 M V+ = 15 V V- = -15 V VL = 5 V = 1 SW = 4 SW I+, I-
f - Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL V- VIN Level Shift/ Drive V+ GND D
V-
FIGURE 1.
TEST CIRCUITS
+5 V +15 V Logic Input 3V 50% 0V VL "10 V S IN GND V- RL 300 W CL 35 pF Switch Output Switch Input* 0V tON VO -VS 90% V+ D VO Switch Input* VS VO tON tr <20 ns tf <20 ns
90%
-15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
*VS = 10 V for tON, VS = -10 V for tOFF Note: Logic input waveform is inverted for switches that have the opposite logic sense control
FIGURE 2. Switching Time
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Document Number: 70050 S-52433--Rev. D, 06-Sep-99
DG411/412/413
Vishay Siliconix
TEST CIRCUITS
+5 V +15 V Logic Input VL VS1 VS2 S1 IN1 S2 IN2 GND V- D2 VO2 Switch Output RL1 300 W RL2 300 W CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V V+ D1 VO1 3V 50% 0V VS1 VO1
90%
90%
tD
tD
-15 V CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make (DG413)
DVO +5 V +15 V VO INX OFF VO CL 10 nF V- INX OFF ON Q = DVO x CL OFF ON OFF
Rg
VL S IN
V+ D
Vg 3V
GND
-15 V
INX dependent on switch configuration Input polarity determined by sense of switch.
FIGURE 4. Charge Injection
C
+5 V
+15 V
C
VL VS Rg = 50 W 0V, 2.4 V S2 NC IN2 GND VS VO S1 IN1
V+ D1 50 W
D2 RL V- C
VO
0V, 2.4 V
XTALK Isolation = 20 log C = RF bypass
-15 V
FIGURE 5. Crosstalk
Document Number: 70050 S-52433--Rev. D, 06-Sep-99
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4-7
DG411/412/413
Vishay Siliconix
TEST CIRCUITS
+5 V C VL VS Rg = 50 W 0V, 2.4 V IN S
V+
+15 V C
+5 V VO C VL RL 50 W
+15 V C
V+
D
S Meter
GND
V-
C 0 V, 2.4 V
IN
-15 V GND Off Isolation = 20 log C = RF Bypass VS VO -15 V V-
D C
HP4192A Impedance Analyzer or Equivalent
FIGURE 6. Off Isolation
FIGURE 7. Source/Drain Capacitances
APPLICATIONS
Single Supply Operation: The DG411/412/413 can be operated with unipolar supplies from 5 V to 44 V. These devices are characterized and tested for unipolar supply operation at 12 V to facilitate the majority of applications. In single supply operation, V+ is tied to VL and V- is tied to 0 V. See Input Switching Threshold vs. Supply Voltage curve for VL versus input threshold requirments. Summing Amplifier When driving a high impedance, high capacitance load such as shown in Figure 8, where the inputs to the summing amplifier have some noise filtering, it is necessary to have shunt switches for rapid discharge of the filter capacitor, thus preventing offsets from occurring at the output.
R1 VIN 1
R2
C1 R5
R3 VIN 2
R4 - VOUT + C2 R6
DG413
FIGURE 8. Summing Amplifier
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